Navitas Semiconductor (Nasdaq: NVTS) shares rose more than 20% in post-market trading on Monday. The move followed news that the company has been awarded the ALATTIS programme by the US Army.
Navitas makes GaNFast gallium nitride and GeneSiC silicon carbide (SiC) power semiconductors. The Army chose it after a competitive evaluation of leading US SiC companies, citing its ultra-high-voltage leadership, defence-grade reliability and US-anchored manufacturing.
ALATTIS stands for Accelerated, Large-Area, 10 kV SiC IGBT. The prototype project will develop and validate a novel domestic manufacturing process for SiC devices rated at 10 kV or above, through iterative design, fabrication and testing.
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It is sponsored by the Army Research Laboratory, under the US Army Combat Capabilities Development Command, and supported by the Joint Experimentation and Technology Accelerator. The aim is to advance high-power electronics for defence and infrastructure.
Navitas’ record includes 6.5 kV SiC thyristors in 2010, 10-15 kV PiN diodes in 2012 and commercial 6.5 kV SiC MOSFETs in 2021, according to the company.
“This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.”
Siddarth Sundaresan, SVP and Chief Technology Officer, Navitas
The company did not disclose the contract’s value, its timeline or any revenue impact, so the size of the opportunity remains unclear. For now, the award offers defence-backed validation of Navitas’s silicon carbide push.
